RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study
2006 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 249, 859-864 p.Article in journal (Refereed) Published
For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIMPL computer codes. We also found that annealing at temperatures as high as 1000 degrees C had quite limited effect on the redistribution of carbon in silicon.
Place, publisher, year, edition, pages
2006. Vol. 249, 859-864 p.
silicon, silicon carbide (SiC), dose, depth profile, Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), beam synthesis
IdentifiersURN: urn:nbn:se:kth:diva-15902DOI: 10.1016/j.nimb.2006.03.182ISI: 000239545000208ScopusID: 2-s2.0-33745966076OAI: oai:DiVA.org:kth-15902DiVA: diva2:333944
QC 20100525. Conference: 17th International Conference on Ion Beam Analysis. Seville, SPAIN. JUN 26-JUL 01, 2005 2010-08-052010-08-052011-09-27Bibliographically approved