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Strong broad C-band room-temperature photoluminescence in amorphous Er2O3 film
KTH, School of Information and Communication Technology (ICT), Material Physics.
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.ORCID iD: 0000-0001-8774-9302
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 2Article in journal (Refereed) Published
Abstract [en]

Photoluminescence with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er2O3 films grown on quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula [J. Phys. E 16, 1214 (1983)] to determine dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient as high as 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. For 5 mm long waveguide amplifier with erbium doping confinement factor of 0.1, the theory predicts the spectral gain of 18 dB with 1.2 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er3+ ions are excited from the ground state to the I-4(3/2) laser level. Strong broadband photoluminescence at room temperature and inherently flat spectral gain promise Er2O3 films for ultrashort high-gain optical waveguide amplifiers and integrated light circuits.

Place, publisher, year, edition, pages
2006. Vol. 89, no 2
Keyword [en]
laser-ablation, silicon, si, luminescence, excitation, gain
URN: urn:nbn:se:kth:diva-15921DOI: 10.1063/1.2221517ISI: 000239793100014ScopusID: 2-s2.0-33746052858OAI: diva2:333963
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Grishin, Alexander M.Khartsev, Sergiy
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