Control of self-heating in thin virtual substrate strained Si MOSFETs
2006 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 53, no 9, 2296-2305 p.Article in journal (Refereed) Published
This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. This paper demonstrates that by using high-quality thin virtual substrates,,the compromised performance enhancements commonly observed in short-gate-length MOSFETs and high-bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. The devices were fabricated with a 2.8-nm gate oxide and included NiSi to reduce the parasitic series resistance. The strained layers grown on the novel substrates comprising 20% Ge did not relax during fabrication. Good ON-state performance, OFF-state performance, and cross-wafer uniformity are demonstrated. The results show that thin virtual substrates have the potential to circumvent the major issues associated with conventional virtual substrate technology. A promising solution for realizing high-performance strained Si devices suitable for a wide range of applications is thus presented.
Place, publisher, year, edition, pages
2006. Vol. 53, no 9, 2296-2305 p.
MOSFETs, self-heating, silicon germanium, strained silicon, virtual substrate, field-effect transistors, n-channel mosfets, high ge content, buffer layers, fabrication, silicon, relaxation, mobility, quality, alloys
IdentifiersURN: urn:nbn:se:kth:diva-15945DOI: 10.1109/ted.2006.881049ISI: 000240076500039ScopusID: 2-s2.0-33947097365OAI: oai:DiVA.org:kth-15945DiVA: diva2:333987
QC 201005252010-08-052010-08-05Bibliographically approved