Change search
ReferencesLink to record
Permanent link

Direct link
Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
Show others and affiliations
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 7Article in journal (Refereed) Published
Abstract [en]

The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic properties of bulk and surface defects, defect segregation, and compensation. In comparing the relative stability of the surface and bulk defects, it is found that the native defects generally have higher formation energies in the bulk. From this it can be concluded that at equilibrium there is a considerably larger fraction of defects at the surface and under nonequilibrium conditions defects are expected to segregate to the surface, given sufficient time. In most cases the charge state of a defect changes upon segregation, altering the charge-carrier concentrations. The photothresholds are also calculated for the three semiconductors and are found to be in good agreement with experimental data.

Place, publisher, year, edition, pages
2006. Vol. 74, no 7
Keyword [en]
scanning-tunneling-microscopy, electronic-structure, semiconductor surfaces, phosphorus vacancy, low-temperatures, native defects, segregation, pseudopotentials, impurities, inp(110)
URN: urn:nbn:se:kth:diva-15966DOI: 10.1103/PhysRevB.74.075332ISI: 000240238800083ScopusID: 2-s2.0-33748140334OAI: diva2:334008
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Göthelid, MatsJohansson, Börje
By organisation
Material Physics, MFApplied Material Physics
In the same journal
Physical Review B. Condensed Matter and Materials Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 28 hits
ReferencesLink to record
Permanent link

Direct link