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Perturbation of Ge(111) and Si(111)root 3 alpha-Sn surfaces by adsorption of dopants
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
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2006 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 600, no 16, 3154-3159 p.Article in journal (Refereed) Published
Abstract [en]

We test the response of the root 3 x root 3 alpha reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (111) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.

Place, publisher, year, edition, pages
2006. Vol. 600, no 16, 3154-3159 p.
Keyword [en]
photoemission, Sn/Ge(111), Sn/Si(111), charge disproportion, phase-transition, sn/ge(111), semiconductor, sn/ge(iii)
URN: urn:nbn:se:kth:diva-15983DOI: 10.1016/j.susc.2006.05.054ISI: 000240413000012ScopusID: 2-s2.0-33748181158OAI: diva2:334025
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Göthelid, MatsKarlsson, Ulf O.
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Material Physics, MF
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