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Intrinsic reliability of AlOx-based magnetic tunnel junctions
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2006 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 42, no 10, 2661-2663 p.Article in journal (Refereed) Published
Abstract [en]

We present a detailed investigation into the intrinsic tunnel barrier reliability in AlOx-based magnetic tunnel junctions (MTJs) as a function of aluminum thickness and oxidation time. The intrinsic reliability is measured as the ramped breakdown voltage (V-bd) at room temperature for both positive and negative polarity. We find that Vbd generally increases with the resistance-area (RA) product of the MTJ. While this dependence is quite strong at low RA, it gradually weakens for higher RA. At fixed RA, Vbd also depends on the original Al film thickness with better properties for thicker Al. Finally, we observe a polarity dependence of V-bd which changes sign as the MTJ goes from thin Al to thick Al. We attribute the polarity dependence to the different quality of the top and bottom interfaces and conclude that the interface emitting the tunneling electrons primarily governs the barrier reliability.

Place, publisher, year, edition, pages
2006. Vol. 42, no 10, 2661-2663 p.
Keyword [en]
dielectric breakdown, magnetic memories, magnetoresistive devices, reliability, tunneling, dielectric-breakdown, barrier, dependence, degradation, oxidation, criteria, mram
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-16020DOI: 10.1109/TMAG.2006.879735ISI: 000240888700135OAI: diva2:334062
QC 20100525 QC 20110927. Conference: 41st IEEE International Magnetics Conference (Intermag 2006). San Diego, CA. MAY 08-12, 2006 Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-09-28Bibliographically approved

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Åkerman, Johan
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Microelectronics and Applied Physics, MAP
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