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Strong valence-band offset bowing of ZnO1-xSx enhances p-type nitrogen doping of ZnO-like alloys
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
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2006 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 97, no 14Article in journal (Refereed) Published
Abstract [en]

Photoelectron spectroscopy, optical characterization, and density functional calculations of ZnO1-xSx reveal that the valence-band (VB) offset E-v(x) increases strongly for small S content, whereas the conduction-band edge E-c(x) increases only weakly. This is explained as the formation of local ZnS-like bonds in the ZnO host, which mainly affects the VB edge and thereby narrows the energy gap: E-g(x=0.28)approximate to E-g(ZnO)-0.6 eV. The low-energy absorption tail is a direct Gamma(v)->Gamma(c) transition from ZnS-like VB. The VB bowing can be utilized to enhance p-type N-O doping with lower formation energy Delta H-f and shallower acceptor state in the ZnO-like alloys.

Place, publisher, year, edition, pages
2006. Vol. 97, no 14
Keyword [en]
deposition, semiconductors, gaasn, film
Identifiers
URN: urn:nbn:se:kth:diva-16033DOI: 10.1103/PhysRevLett.97.146403ISI: 000241057100053Scopus ID: 2-s2.0-33749492977OAI: oai:DiVA.org:kth-16033DiVA: diva2:334075
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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