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Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1-xGex and Si1-yCy buffer layers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 411-415 p.Article in journal (Refereed) Published
Abstract [en]

The structural and electrical properties of La0.75Sr0.25MnO3 (LSMO) film on Bi4Ti3O12 (BTO)/CeO2/YSZ buffered Si1-xGex/Si(0.05

Place, publisher, year, edition, pages
2006. Vol. 515, no 2, 411-415 p.
Keyword [en]
manganites, heteroepitaxial film structure on Si, strain effect, high resolution reciprocal lattice mapping (HRRLM), temperature coefficient of resistance (TCR), thin-films, colossal magnetoresistance, dielectric-properties
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-16052DOI: 10.1016/j.tsf.2005.12.222ISI: 000241220600007Scopus ID: 2-s2.0-33748746242OAI: oai:DiVA.org:kth-16052DiVA: diva2:334094
Note
QC 20100525 QC 20110929. Conference: 12th International Conference on Thin Films. BRATISLAVA, SLOVAKIA. SEP 15-20, 2002Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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