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Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
KTH, School of Biotechnology (BIO), Theoretical Chemistry.ORCID iD: 0000-0002-2442-1809
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 7Article in journal (Refereed) Published
Abstract [en]

The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.

Place, publisher, year, edition, pages
2006. Vol. 100, no 7
Keyword [en]
molecular-beam epitaxy, 1.3 mu-m, linewidth enhancement factor, dot-p, theory, ingaasn/gaas lasers, semiconductors, alloys, parameters, pressure, exchange
URN: urn:nbn:se:kth:diva-16062DOI: 10.1063/1.2356782ISI: 000241248000005OAI: diva2:334104
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Fu, Ying
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