Creation of a metallic channel at the Sn/InAs(111)B surface studied using synchrotron-radiation photoelectron spectroscopy
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 205406Article in journal (Refereed) Published
The properties of a Sn-induced two-dimensional electron gas at the As-terminated InAs(111)B(1x1) surface was studied by synchrotron radiation photoelectron spectroscopy. The two-dimensional electron gas reveals itself via a narrow structure at the Fermi level, visible close to normal emission for tin coverage in the range 0.5 to 2 monolayers. Although this electron gas exhibits properties that in several respects resemble those of intrinsic charge accumulation layers on free InAs surfaces, our observations suggest that the present electron gas is much more linked to the Sn adlayer.
Place, publisher, year, edition, pages
2006. Vol. 74, no 205406
2-dimensional electron-gas, accumulation layer, inas(110), band
IdentifiersURN: urn:nbn:se:kth:diva-16163DOI: 10.1103/PhysRevB.74.205406ISI: 000242409400086ScopusID: 2-s2.0-33750584060OAI: oai:DiVA.org:kth-16163DiVA: diva2:334205
QC 201005252010-08-052010-08-052010-09-10Bibliographically approved