Change search
ReferencesLink to record
Permanent link

Direct link
Band gap energy determination by photoacoustic spectroscopy under continuous light excitation
Show others and affiliations
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 23Article in journal (Refereed) Published
Abstract [en]

In this work the authors used the photoacoustic spectroscopy under continuous light excitation to determine the optical band gap of semiconductors. The experiments were performed in lead iodide PbI2 and hexagonal silicon carbide 4H-SiC samples. The nonradiative relaxation processes are discussed in terms of the generated signal. A mechanism to describe the signal increase/decrease under the continuous excitation is presented. The results showed that the method was useful to locate the band gap directly from the optical absorption spectra.

Place, publisher, year, edition, pages
2006. Vol. 89, no 23
Keyword [en]
lead iodide-crystals, thermal-diffusivity, optical-absorption, semiconductors, gaas, transport, si, cr
URN: urn:nbn:se:kth:diva-16194DOI: 10.1063/1.2402239ISI: 000242709200050ScopusID: 2-s2.0-33845449181OAI: diva2:334236
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Persson, Clas
By organisation
Applied Material Physics
In the same journal
Applied Physics Letters

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 47 hits
ReferencesLink to record
Permanent link

Direct link