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Broadband photoluminescence from pulsed laser deposited Er2O3 films
KTH, School of Information and Communication Technology (ICT), Material Physics.
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.ORCID iD: 0000-0001-8774-9302
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2006 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 121, no 2, 256-258 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence (PL) with the bandwidth of 45 nm (1523-1568 nm, at the level of 3 dB) was observed in amorphous Er2O3 films grown on to the quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula to determine the dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient of 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. In 5.7mm-long waveguide amplifier a theory predicts the spectral gain of 20dB with 1.4dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er3+ ions are excited from the ground state to the I-4(13/2) laser level. Strong broadband PL at room temperature and inherently flat spectral gain promise Er2O3 films for ultra-short high-gain optical waveguide amplifiers and integrated light circuits.

Place, publisher, year, edition, pages
2006. Vol. 121, no 2, 256-258 p.
Keyword [en]
mu-m, gain
National Category
Atom and Molecular Physics and Optics
URN: urn:nbn:se:kth:diva-16199DOI: 10.1016/j.jlumin.2006.08.001ISI: 000242751200017ScopusID: 2-s2.0-33750330671OAI: diva2:334241
QC 20100525 QC 20110929. Conference: Symposium on Si-based Photonics held at the EMRS 2006 Conference. Nice, FRANCE. MAY 29-JUN 02, 2006Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-09-29Bibliographically approved

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Grishin, Alexander M.Khartsev, Sergiy
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