Photoacoustic spectroscopy to determine the optical properties of thin film 4H-SiC
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 4, 2821-2823 p.Article in journal (Refereed) Published
The optical transitions in a range of 1.5-5.2 eV of n-type 4H-SiC have been investigated experimentally by photoacoustic spectroscopy and theoretically by a full-potential linearized augmented plane wave method. From the absorption spectrum, we found the indirect optical bandgap at 3.2 eV and the direct transitions around 4.5 eV in very good agreement with what has been predicted by theoretical calculations.
Place, publisher, year, edition, pages
2006. Vol. 515, no 4, 2821-2823 p.
silicon carbide, photoacoustic spectroscopy, hexagonal sic polytypes, absorption-bands, 4h, states, wave, cr
IdentifiersURN: urn:nbn:se:kth:diva-16214DOI: 10.1016/j.tsf.2006.08.009ISI: 000242931900261ScopusID: 2-s2.0-33750821759OAI: oai:DiVA.org:kth-16214DiVA: diva2:334256
QC 201005252010-08-052010-08-05Bibliographically approved