Scanning spreading resistance microscopy of shallow doping profiles in silicon
2006 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 253, no 02-jan, 141-144 p.Article in journal (Refereed) Published
We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron.
Place, publisher, year, edition, pages
2006. Vol. 253, no 02-jan, 141-144 p.
Computer and Information Science
IdentifiersURN: urn:nbn:se:kth:diva-16238DOI: 10.1016/j.nimb.2006.10.050ISI: 000243178600029ScopusID: 2-s2.0-33751331271OAI: oai:DiVA.org:kth-16238DiVA: diva2:334280
QC 20100525 QC 20110929. Conference: Symposium on Si-Bases Materials for Advanced Microelectronic Devices held at the 2006 E-MRS Spring Meeting. Nice, FRANCE. MAY 29-JUN 02, 2006 2010-08-052010-08-052011-09-29Bibliographically approved