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Scanning spreading resistance microscopy of shallow doping profiles in silicon
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2006 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 253, no 02-jan, 141-144 p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron.

Place, publisher, year, edition, pages
2006. Vol. 253, no 02-jan, 141-144 p.
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Computer and Information Science
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URN: urn:nbn:se:kth:diva-16238DOI: 10.1016/j.nimb.2006.10.050ISI: 000243178600029Scopus ID: 2-s2.0-33751331271OAI: oai:DiVA.org:kth-16238DiVA: diva2:334280
Note
QC 20100525 QC 20110929. Conference: Symposium on Si-Bases Materials for Advanced Microelectronic Devices held at the 2006 E-MRS Spring Meeting. Nice, FRANCE. MAY 29-JUN 02, 2006 Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.Karlsson, Ulf O.

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Suchodolskis, ArturasHallén, Anders.Karlsson, Ulf O.
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  • apa
  • harvard1
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  • de-DE
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