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Origin of the breakdown of Wentzel-Kramers-Brillouin-based tunneling models
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 21Article in journal (Refereed) Published
Abstract [en]

The tunneling conductance of three varieties of CoFeB/MgO/CoFeB magnetic tunnel junctions depends quadratically on the applied voltage to anomalously high biases. Within the framework traditional of WKB models, this implies unphysical tunnel barrier parameters: heights near 20 eV, or widths corresponding to fewer than two MgO lattice constants. We demonstrate that the failure of such models to yield physically reasonable parameters originates from an experimentally unavoidable distribution of barrier thicknesses, possibly acting synergistically with the band structure of the barrier material. This implies that existing WKB models may lead to physically incorrect barrier parameters for contemporary tunnel junctions, magnetic or otherwise.

Place, publisher, year, edition, pages
2006. Vol. 74, no 21
Keyword [en]
room-temperature, junctions, magnetoresistance, reliability, conductance, barriers, criteria
URN: urn:nbn:se:kth:diva-16241DOI: 10.1103/PhysRevB.74.212404ISI: 000243195500007ScopusID: 2-s2.0-33845541251OAI: diva2:334283
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Åkerman, Johan
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Microelectronics and Applied Physics, MAP
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