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Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-5260-5322
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2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 23Article in journal (Refereed) Published
Abstract [en]

We report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at E-V+0.38 eV responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.

Place, publisher, year, edition, pages
2006. Vol. 74, no 23
Keyword [en]
silicon, diodes, semiconductors, dislocations, crystals, mobility, devices
Identifiers
URN: urn:nbn:se:kth:diva-16244DOI: 10.1103/PhysRevB.74.233203ISI: 000243195700007Scopus ID: 2-s2.0-33845536056OAI: oai:DiVA.org:kth-16244DiVA: diva2:334286
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.Linnros, Jan

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