Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 23Article in journal (Refereed) Published
We report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at E-V+0.38 eV responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.
Place, publisher, year, edition, pages
2006. Vol. 74, no 23
silicon, diodes, semiconductors, dislocations, crystals, mobility, devices
IdentifiersURN: urn:nbn:se:kth:diva-16244DOI: 10.1103/PhysRevB.74.233203ISI: 000243195700007ScopusID: 2-s2.0-33845536056OAI: oai:DiVA.org:kth-16244DiVA: diva2:334286
QC 201005252010-08-052010-08-05Bibliographically approved