Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC
2006 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 24Article in journal (Refereed) Published
The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10-700 K for nitrogen concentrations between 3.5x10(15) and 5x10(19) cm(-3). For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (N-c) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find N-c similar to 10(19) cm(-3).
Place, publisher, year, edition, pages
2006. Vol. 74, no 24
semiconductors, 4h, conductivity, absorption, transport, carbide
IdentifiersURN: urn:nbn:se:kth:diva-16245DOI: 10.1103/PhysRevB.74.245201ISI: 000243195800044ScopusID: 2-s2.0-33845267664OAI: oai:DiVA.org:kth-16245DiVA: diva2:334287
QC 201005252010-08-052010-08-05Bibliographically approved