Annealing of Al implanted 4H silicon carbide
2006 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, 37-40 p.Article in journal (Refereed) Published
Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3). These samples were then annealed at temperatures between 1500 and 1950 degrees C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 degrees C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles.
Place, publisher, year, edition, pages
2006. Vol. T126, 37-40 p.
spreading resistance microscopy, 4h-silicon carbide, aluminum, activation, boron
IdentifiersURN: urn:nbn:se:kth:diva-16275DOI: 10.1088/0031-8949/2006/T126/008ISI: 000246789700009ScopusID: 2-s2.0-42349107305OAI: oai:DiVA.org:kth-16275DiVA: diva2:334317
Conference: 21sth Nordic Semiconductor Meeting. Sundvolden, Norway. AUG 18-19, 2005
QC 201109272010-08-052010-08-052012-09-26Bibliographically approved