Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2006 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, 97-100 p.Article in journal (Refereed) Published
Abstract [en]

A novel process to form shallow junctions for source) drain application in CMOS structures is presented. The method consists of two steps; first an HCl-etch followed by SiCl2H2-based selective epitaxy in the same run in a reduced pressure chemical vapour deposition chamber. Optimization of etch and epitaxy processes have been investigated and the active dopant concentration in SiGe layers grown was measured directly in the device openings.

Place, publisher, year, edition, pages
2006. Vol. T126, 97-100 p.
Keyword [en]
epitaxial-growth, gas-phase, silicon, films
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-16277DOI: 10.1088/0031-8949/2006/T126/022ISI: 000246789700023Scopus ID: 2-s2.0-42349088480OAI: oai:DiVA.org:kth-16277DiVA: diva2:334319
Note
QC 20100525 QC 20110927. Conference: 21sth Nordic Semiconductor Meeting. Sundvolden, NORWAY. AUG 18-19, 2005 Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Radamson, HenryHållstedt, JuliusIsheden, ChristianÖstling, Mikael
By organisation
Microelectronics and Information Technology, IMITIntegrated Devices and Circuits
In the same journal
Physica Scripta
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 40 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf