Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors
2006 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, 97-100 p.Article in journal (Refereed) Published
A novel process to form shallow junctions for source) drain application in CMOS structures is presented. The method consists of two steps; first an HCl-etch followed by SiCl2H2-based selective epitaxy in the same run in a reduced pressure chemical vapour deposition chamber. Optimization of etch and epitaxy processes have been investigated and the active dopant concentration in SiGe layers grown was measured directly in the device openings.
Place, publisher, year, edition, pages
2006. Vol. T126, 97-100 p.
epitaxial-growth, gas-phase, silicon, films
IdentifiersURN: urn:nbn:se:kth:diva-16277DOI: 10.1088/0031-8949/2006/T126/022ISI: 000246789700023ScopusID: 2-s2.0-42349088480OAI: oai:DiVA.org:kth-16277DiVA: diva2:334319
QC 20100525 QC 20110927. Conference: 21sth Nordic Semiconductor Meeting. Sundvolden, NORWAY. AUG 18-19, 2005 2010-08-052010-08-052011-09-27Bibliographically approved