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Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential
KTH, School of Biotechnology (BIO), Theoretical Chemistry.ORCID iD: 0000-0002-2442-1809
2006 (English)In: Journal of Nanoelectronics and Optoelectronics, ISSN 1555-130X, Vol. 1, no 1, 108-113 p.Article in journal (Refereed) Published
Abstract [en]

By solving the three-dimensional Schrodinger equation in the time domain, we study the wave packet transport through a Si quantum nano wire embedded in silicon dioxide. The temporal behaviour of the wave packet under the influence of an ionized impurity located in the system has been clearly revealed. In general, the presence of an impurity potential deteriorates the coherence transmission of the wave packet along the quantum wire. However, the large effective mass of the electrons in Si material largely overcomes the scattering potential induced by a positively charged impurity, which traps only a small fraction of a wave packet when the wave vector of the transporting wave packet resonantly matches with the characteristic length of the scattering potential. The repulsive potential of a negatively charged impurity strongly reflects the low-energy wave packet transmission. We conclude that the dominating impurity scattering process limiting ballistic transport in these nano wires will be determined by negatively charged impurities located at the Si-SiO2 interface.

Place, publisher, year, edition, pages
2006. Vol. 1, no 1, 108-113 p.
Keyword [en]
localized scatterers, schrodinger-equation, metallic conduction, spatial variation, building-blocks, devices, semiconductor, transport, currents, fields
URN: urn:nbn:se:kth:diva-16281DOI: 10.1166/jno.2006.013ISI: 000248005100013OAI: diva2:334323
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Fu, Ying
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