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Impact of interfacial roughness on tunneling conductance and extracted barrier parameters
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 4Article in journal (Refereed) Published
Abstract [en]

The net tunneling conductance of metal-insulator-metal tunnel junctions is studied using a distribution of barrier thicknesses consistent with interfacial roughness typical of state-of-the-art tunnel junctions. Moderate amounts of roughness cause the conductance to resemble that of much thinner and taller barriers. Fitting numerically generated conductance data that include roughness with models that assume a single-thickness barrier leads to erroneous results for both the barrier height and width. Rules of thumb are given that connect the roughness to the real space mean thickness and the thickness inferred from fitting the net conductance with traditional tunneling models.

Place, publisher, year, edition, pages
2007. Vol. 90, no 4
Keyword [en]
junctions, criteria
URN: urn:nbn:se:kth:diva-16347DOI: 10.1063/1.2431443ISI: 000243789600113ScopusID: 2-s2.0-33846586507OAI: diva2:334389
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Åkerman, Johan
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Microelectronics and Applied Physics, MAP
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