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Efficient switching of Rashba spin splitting in wide modulation-doped quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 5Article in journal (Refereed) Published
Abstract [en]

The authors demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well it can be an order of magnitude stronger than for the average uniform electric field. For even smaller asymmetry spin subbands can have wave functions and/or expectation values of the spin direction that are completely changed as the in-plane wave vector varies. The Dresselhaus effect [Phys. Rev. 100, 580 (1955)] can give an anticrossing at which the spin rapidly flips.

Place, publisher, year, edition, pages
2007. Vol. 90, no 5
URN: urn:nbn:se:kth:diva-16366DOI: 10.1063/1.2437132ISI: 000243977300080ScopusID: 2-s2.0-33846972264OAI: diva2:334408
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Ekenberg, Ulf
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