Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Intrinsic electric fields in AlGaN quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
Show others and affiliations
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 8Article in journal (Refereed) Published
Abstract [en]

Intrinsic electric fields in AlxGa1-xN/AlyGa1-yN quantum wells embedded into p-i-n structures are studied using photoluminescence experiments. Spectral shifts induced by external bias and screening by photoexcited carriers allow evaluating the intrinsic fields caused by piezoelectric and spontaneous polarizations. In quantum wells with low Al content, the field is about 1 MV/cm, which is in agreement with theoretical estimations. For high Al molar fractions (35% well, 50% barrier), the extracted intrinsic field is lower and, most importantly, has the opposite sign to that predicted by the theory.

Place, publisher, year, edition, pages
2007. Vol. 90, no 8
Keyword [en]
light-emitting-diodes, piezoelectric field, polarization
Identifiers
URN: urn:nbn:se:kth:diva-16404DOI: 10.1063/1.2679864ISI: 000244420600029Scopus ID: 2-s2.0-33847221017OAI: oai:DiVA.org:kth-16404DiVA: diva2:334446
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Open this publication in new window or tab >>Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. 98 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:12
Keyword
AIGaN, deep-UV LEDs, polarization fields, screening, exciton binding energy, alloy fluctuations, near-field microscopy, carrier dynamics, LED aging
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-37917 (URN)978-91-7501-065-6 (ISBN)
Public defence
2011-09-20, Sal / Hall C1, Electrum,, Isafjordsgatan 26, Kista, 13:00 (English)
Opponent
Supervisors
Note
QC 20110831Available from: 2011-08-31 Created: 2011-08-19 Last updated: 2012-02-23Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Marcinkevicius, Saulius

Search in DiVA

By author/editor
Marcinkevicius, SauliusPinos, Andrea
By organisation
Microelectronics and Applied Physics, MAP
In the same journal
Applied Physics Letters

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 57 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf