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Unique melting behavior in phase-change materials for rewritable data storage
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
2007 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 98, no 5Article in journal (Refereed) Published
Abstract [en]

Ge2Sb2Te5 (GST) is a technologically very important phase-change material for rewritable optical and electrical storage because it can be switched rapidly back and forth between amorphous and crystalline states for millions of cycles by appropriate pulsed heating. However, an understanding of this complicated phenomenon has not yet been achieved. Here, by ab initio molecular dynamics, we unravel the reversible phase transition process of GST. The melting of rocksalt-structured GST is unique in that it forms two-dimensional linear or tangled clusters while keeping order in the perpendicular direction. It is this specific character that results in the fast and reversible phase transition between amorphous and crystalline and hence rewritable data Storage.

Place, publisher, year, edition, pages
2007. Vol. 98, no 5
Keyword [en]
molecular-dynamics, ge2sb2te5 films, memory
Identifiers
URN: urn:nbn:se:kth:diva-16428DOI: 10.1103/PhysRevLett.98.055505ISI: 000244646100048Scopus ID: 2-s2.0-33846833587OAI: oai:DiVA.org:kth-16428DiVA: diva2:334470
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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