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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy
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2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 300, no 1, 79-82 p.Article in journal (Refereed) Published
Abstract [en]

GaN layers of 280 nm thick were grown on sapphire, silicon (1 1 1) and GaN template by plasma assisted molecular beam epitaxy. From atomic force microscopy and high-resolution X-ray diffraction, it was found that GaN grown on sapphire and template gave smooth surface (RMS less then 0.5 nm) and very high crystalline quality (FWHM of (0 0 0 2) scan on sapphire only 48 arcsec). However, GaN growth on Si (1 1 1) provided rough surface and poor crystalline quality. The GaN/AlN multiple quantum well structures were grown on sapphire and template. Intersubband absorption spectra from Fourier transform infrared spectroscopy indicated that layers on GaN templates had better performances than on sapphire substrates.

Place, publisher, year, edition, pages
2007. Vol. 300, no 1, 79-82 p.
Keyword [en]
atomic force microscopy, high-resolution X-ray diffraction, reflection high-energy electron diffraction, molecular beam epitaxy, nitrides
Identifiers
URN: urn:nbn:se:kth:diva-16508DOI: 10.1016/j.jcrysgro.2006.10.241ISI: 000245368700016Scopus ID: 2-s2.0-33847321030OAI: oai:DiVA.org:kth-16508DiVA: diva2:334550
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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