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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2007 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 253, no 11, 4836-4842 p.Article in journal (Refereed) Published
Abstract [en]

Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 degrees C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the polycrystalline SiC.

Place, publisher, year, edition, pages
2007. Vol. 253, no 11, 4836-4842 p.
Keyword [en]
ion beam synthesis (IBS), silicon, silicon carbide (SiC), infrared spectroscopy (IR), Raman spectroscopy, time-of-flight energy elastic recoil detection analysis (ToF-E-ERDA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), ion-beam synthesis, silicon, layers, carbide, growth, carbon, films
URN: urn:nbn:se:kth:diva-16531DOI: 10.1016/j.apsusc.2006.10.055ISI: 000245500200004ScopusID: 2-s2.0-33847316578OAI: diva2:334573
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Hallén, Anders.
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