Suppression of higher order transverse and oxide modes in 1.3-mu m InGaAsVCSELs by an inverted surface relief
2007 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 19, no 08-maj, 327-329 p.Article in journal (Refereed) Published
It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mu m InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance.
Place, publisher, year, edition, pages
2007. Vol. 19, no 08-maj, 327-329 p.
InGaAs, inverted surface relief, single mode, vertical-cavity surface-emitting laser (VCSEL), emitting lasers, vcsels
IdentifiersURN: urn:nbn:se:kth:diva-16560DOI: 10.1109/lpt.2007.891631ISI: 000245768200025ScopusID: 2-s2.0-33947702138OAI: oai:DiVA.org:kth-16560DiVA: diva2:334602
QC 201005252010-08-052010-08-05Bibliographically approved