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Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2007 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 257, 195-198 p.Article in journal (Refereed) Published
Abstract [en]

In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation.

Place, publisher, year, edition, pages
2007. Vol. 257, 195-198 p.
Keyword [en]
ion beam synthesis (IBS), silicon, silicon carbide (SiC), glancing incidence X-ray diffraction (GIXRD), activation energy, initial-stage, silicon, carbide, si, epitaxy, si(001), quality, carbon, films
URN: urn:nbn:se:kth:diva-16599ISI: 000246165500045ScopusID: 2-s2.0-33947691532OAI: diva2:334641
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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