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Development of a high-efficiency high-resolution imaging detector for 30-80 keV X-rays
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
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2007 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 576, no 1, 52-55 p.Article in journal (Refereed) Published
Abstract [en]

A newly developed fabrication method makes the formation of deep structured scintillator screens possible. We demonstrate that electrochemical etching in silicon can be used to produce regular arrays of 120 mu m deep pores with a 4 mu m pitch. A layer of SiO2 is grown on the pore walls and CsI:Tl is melted into the pores, resulting in a structure with a high refractive index core surrounded by a quartz cladding, providing efficient light guiding. The efficiency and radiation hardness of the scintillator is evaluated in realistic environment at beamline ID15 at the ESRF synchrotron. The efficiency is measured to be a factor two higher than a planar YAG:Cc scintillator of equal thickness, while radiation damage is found to be neglectable for doses up to at least 2 x 10(4) Gy.

Place, publisher, year, edition, pages
2007. Vol. 576, no 1, 52-55 p.
Keyword [en]
3DXRD, scintillators, CsI : Tl, electrochemical etching, efficiency, radiation damage
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-16707DOI: 10.1016/j.nima.2007.01.119ISI: 000247330000013Scopus ID: 2-s2.0-34248192890OAI: oai:DiVA.org:kth-16707DiVA: diva2:334750
Note
8th International Workshop on Radiation Imaging Detectors Location: Pisa, Italy, Date: JUL 02-06, 2006 Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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