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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2007 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 51, no 5, 771-777 p.Article in journal (Refereed) Published
Abstract [en]

Mobility and low-frequency (LF) noise were studied in tensile strained Si n- and pMOSFETs fabricated on relaxed SiGe virtual substrates. Both the impact of the channel orientation ((110) or (100) on (100) Si) and the tensile strain were carefully investigated. Two types of virtual substrates were used; a thin relaxed SiGe layer (20% Ge) and a thick one (27% Ge). The strained Si nMOSFETs fabricated on the thin substrate showed similar LF noise level as in the reference devices, whereas the thick substrate caused severely increased LF noise in the nMOSFETs. The latter was linked to the higher Ge concentration and explained by possible misfit dislocations and increased defect densities, likely resulting from strain relaxation caused by ion implantation damage. On the other hand, considerably lower LF noise was achieved in the pMOSFETs on the thick SiGe. The channel orientation was not found to have a significant influence on the LF noise performance in any of the studied devices.

Place, publisher, year, edition, pages
2007. Vol. 51, no 5, 771-777 p.
Keyword [en]
low-frequency noise, 1/f noise, mobility, strained-Si, MOSFET, channel orientation, SiGe virtual substrates, 1/f noise, mobility, silicon, fluctuations, equilibrium, transistors, devices, gate, mos, ge
Identifiers
URN: urn:nbn:se:kth:diva-16712DOI: 10.1016/j.sse.2007.03.011ISI: 000247353200021Scopus ID: 2-s2.0-34248550431OAI: oai:DiVA.org:kth-16712DiVA: diva2:334755
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Malm, B. GunnarHellström, Per-Erik

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