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Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions
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2007 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 99, no 4Article in journal (Refereed) Published
Abstract [en]

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schrodinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.

Place, publisher, year, edition, pages
2007. Vol. 99, no 4
Keyword [en]
random-access memory, electron, magnetoresistance, criteria, gap
Identifiers
URN: urn:nbn:se:kth:diva-16824DOI: 10.1103/PhysRevLett.99.047206ISI: 000248345800062Scopus ID: 2-s2.0-34547449346OAI: oai:DiVA.org:kth-16824DiVA: diva2:334867
Note

QC 20100525

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-04-28Bibliographically approved

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Åkerman, Johan
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Microelectronics and Applied Physics, MAP
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