Dynamic spin-polarized resonant tunneling in magnetic tunnel junctions
2007 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 99, no 4Article in journal (Refereed) Published
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schrodinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.
Place, publisher, year, edition, pages
2007. Vol. 99, no 4
random-access memory, electron, magnetoresistance, criteria, gap
IdentifiersURN: urn:nbn:se:kth:diva-16824DOI: 10.1103/PhysRevLett.99.04206ISI: 000248345800062ScopusID: 2-s2.0-34547449346OAI: oai:DiVA.org:kth-16824DiVA: diva2:334867
QC 201005252010-08-052010-08-05Bibliographically approved