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Linear optical response of zinc-blende and wurtzite III-N (III = B, Al, Ga, and In)
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 305, no 2, 408-413 p.Article in journal (Refereed) Published
Abstract [en]

We present calculated dielectric function epsilon(omega) and linear optical absorption alpha(omega) of the cubic and hexagonal structures of BN, AIN, GaN, and InN, employing an all-electron linearized augmented plane wave method within the local density approximation (LDA) plus quasi-particle (QP) correction. We show that this LDA+QP approach yields accurate high-frequency dielectric constant Moreover, by employing a modelled electron-optical phonon interaction we calculate the static dielectric function epsilon(0).

Place, publisher, year, edition, pages
2007. Vol. 305, no 2, 408-413 p.
Keyword [en]
nitrides, semiconducting materials, computer simulation, crystal structure, semiconductors, approximation
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-16830DOI: 10.1016/j.jcrysgro.2007.03.026ISI: 000248431700018Scopus ID: 2-s2.0-34347342696OAI: oai:DiVA.org:kth-16830DiVA: diva2:334873
Note
4th International Workshop on Bulk Nitride Semiconductors Location: Makino, Japan, Date: OCT 17-22, 2006Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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