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UV patterning of vanadium pentoxide films for device applications
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2007 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 40, no 17, 5283-5286 p.Article in journal (Refereed) Published
Abstract [en]

In this work we present the results of selective chemical etching of amorphous vanadium pentoxide films after their modification by ultraviolet ( UV) radiation. V2O5 resist can be either positive or negative, depending on the developer composition. It was shown that UV- exposed V2O5 films after development and vacuum annealing can be transformed into VO2 structures which exhibit an electrically induced resistance switching effect. The proposed method demonstrates the feasibility of using V2O5 as an effective inorganic resist material for ambient condition UV photomicrolithography. Also, this material has a great potential for fabrication of vanadium oxide- based devices.

Place, publisher, year, edition, pages
2007. Vol. 40, no 17, 5283-5286 p.
Keyword [en]
v2o5 thin-films, electrical-properties, laser irradiation, oxides, growth
URN: urn:nbn:se:kth:diva-16879DOI: 10.1088/0022-3727/40/17/040ISI: 000248785700040ScopusID: 2-s2.0-34548681830OAI: diva2:334922
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Grishin, Alexander M.
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