Pb induced charge accumulation on InAs(111)B
2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 15, 3246-3252 p.Article in journal (Refereed) Published
The Pb/InAs(111)B interface has been studied by synchrotron radiation photoelectron spectroscopy (SR-PES) of valence band and ln4d, As3d and Pb5d core levels. Room temperature deposition of similar to 1 ML of Pb on InAs(I I I)B leads to an ordered overlayer that induces a metallic channel at the surface, as seen through a weak emission in the vicinity of the Fermi level. Its narrow localization in reciprocal space supports the formation of a two-dimensional free electron gas (2DEG) in the surface region. It is proposed that the adsorbed metal layer swaps the initial polarisation of the surface and thus pulls electrons back to the surface. This charge re-arrangement increases the charge density in the accumulation layer and reduces the screening length and thus the depth of the potential well at the surface.
Place, publisher, year, edition, pages
2007. Vol. 601, no 15, 3246-3252 p.
photoelectron spectroscopy, indium arsenide, accumulation layer, by-layer growth, low-temperature, surfaces, spectroscopy, adsorption, interface, states
IdentifiersURN: urn:nbn:se:kth:diva-16887DOI: 10.1016/j.susc.2007.05.058ISI: 000248881900013ScopusID: 2-s2.0-34447504892OAI: oai:DiVA.org:kth-16887DiVA: diva2:334930
QC 201005252010-08-052010-08-052010-09-10Bibliographically approved