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Oxygen vacancy formation energy in Pd-doped ceria: A DFT+U study
KTH, School of Biotechnology (BIO), Theoretical Chemistry.
2007 (English)In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 127, no 7Article in journal (Refereed) Published
Abstract [en]

Using the DFT+U method, i.e., first principles density functional theory calculations with the inclusion of on-site Coulomb interaction, the effects of Pd doping on the O vacancy formation energy (E-vac) in CeO2 has been studied. We find that E-vac is lowered from 3.0 eV in undoped ceria to 0.6 eV in the Pd-doped compound. Much of this decrease can be attributed to emerging Pd-induced gap states above the valence band and below the empty Ce 4f states. These localized defect states involve the Pd ion and its nearest neighbors, which are also the main acceptors of the extra electrons left on reduction. The effect of the Pd dopant on the geometric structure is very modest for CeO2 but considerable for CeO2-x.

Place, publisher, year, edition, pages
2007. Vol. 127, no 7
Keyword [en]
automotive exhaust catalysts, low-index surfaces, electronic-structure, ab-initio, storage, oxide, decomposition, reduction, methanol, defects
Identifiers
URN: urn:nbn:se:kth:diva-16890DOI: 10.1063/1.2752504ISI: 000248905300025OAI: oai:DiVA.org:kth-16890DiVA: diva2:334933
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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