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High-temperature dynamics, high-speed modulation, and transmission experiments using 1.3-mu m InGaAs single-mode VCSELs
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2007 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 25, no 9, 2791-2798 p.Article in journal (Refereed) Published
Abstract [en]

High-temperature dynamics, including small and large signal modulation response, of 1.28-ftm GaAs-based vertical-cavity surface-emitting lasers (VCSELs) with highly strained InGaAs quantum wells have been investigated. The VCSELs are oxide-confined with a relatively large oxide aperture for high output power and have a surface relief for fundamental mode operation. An inverted surface relief is used to improve manufacturability and to suppress oxide modes that otherwise appear in VCSELs with a large detuning, between the cavity resonance and the gain peak. The size dependence of the modulation bandwidth and bandwidth limitations are. investigated. A VCSEL with an optimum combination of oxide aperture and surface relief diameters produces clear open eyes with an extinction ratio of > 6 dB at OC-48 and 10-GbE bit rates from 25 degrees C to 85 degrees C under constant drive conditions. The same VCSEL is also shown to be capable of eiror-free transmission (BER < 10(-9)) over 9 km of standard single-mode fiber under the same conditions.

Place, publisher, year, edition, pages
2007. Vol. 25, no 9, 2791-2798 p.
Keyword [en]
high-speed modulation, InGaAs, inverted surface relief, single mode, vertical-cavity surface-emitting laser (VCSEL), surface-emitting lasers, oxide confined vcsels, 1.3 mu-m, suppression, relief
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URN: urn:nbn:se:kth:diva-16947DOI: 10.1109/jlt.2007.903308ISI: 000249350000060ScopusID: 2-s2.0-34548625210OAI: diva2:334990

QC 20100525

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2014-12-08Bibliographically approved
In thesis
1. Materials and Processing Technologies for Advanced Electronic and Photonic Devices
Open this publication in new window or tab >>Materials and Processing Technologies for Advanced Electronic and Photonic Devices
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
stockholm: KTH Royal Institute of Technology, 2014. 84 p.
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:15
National Category
Engineering and Technology
urn:nbn:se:kth:diva-157138 (URN)978-91-7595-351-9 (ISBN)
Public defence
2014-12-17, Sal/Hal A, Electrum, KTH-ICT, Kista, 10:00 (English)

QC 20141208

Available from: 2014-12-08 Created: 2014-12-07 Last updated: 2014-12-08Bibliographically approved

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Zhang, ZhenzhongBerggren, JesperHammar, Mattias
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Microelectronics and Applied Physics, MAP
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