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Guided plasmon polariton at 2D metal corners
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-3368-9786
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2007 (English)In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 24, no 9, 2333-2342 p.Article in journal (Refereed) Published
Abstract [en]

We investigate the properties of plasmon polaritons guided by 2D monoangular metal corners with a vector finite-element method. Such corner waveguides in general include both V-channel- and A-wedge-type waveguides. The influences of both geometric parameters (i.e., corner angle, tip sharpness, etc.) and operating wavelength to the mode properties, such as effective mode index, loss, and mode field size, are inspected. It is noticed that both a smaller corner angle and a sharper corner tip help to better confine the mode field. The confinement of the V-channel waveguide is found to be especially sensitive to its angle, while the confinement of the A-wedge waveguide is affected about equally by its angle and tip sharpness. Almost all superior mode field confinement is realized at the expense of higher propagation loss for such waveguides. The chromatic dispersion of such waveguides is found to be adequate for applications in integrated optical circuits. The mode behaviors of realistic corner waveguides with finite sidewalls are also studied.

Place, publisher, year, edition, pages
2007. Vol. 24, no 9, 2333-2342 p.
Keyword [en]
subwavelength wave-guide, surface, thin, behavior, fields, modes, films, slot
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-16993DOI: 10.1364/JOSAB.24.002333ISI: 000249842500042Scopus ID: 2-s2.0-36049029781OAI: oai:DiVA.org:kth-16993DiVA: diva2:335036
Note
QC 20100525 QC 20111129Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Yan, Min

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