1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain
2007 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 28, no 11, 1007-1009 p.Article in journal (Refereed) Published
This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO approximate to 1200 V, a low specific ON-resistance R-SP_ON approximate to 5.2 m Omega . cm(2), and a high common-emitter current. gain beta approximate to 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N2O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.
Place, publisher, year, edition, pages
2007. Vol. 28, no 11, 1007-1009 p.
bipolar junction transistors (BJTs), current gain, emitter-size effect, high voltage, surface recombination, 4H-silicon carbide, inversion channel mobility, mosfets
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-17077DOI: 10.1109/led.2007.907418ISI: 000250524200023ScopusID: 2-s2.0-36148960173OAI: oai:DiVA.org:kth-17077DiVA: diva2:335120
QC 201005252010-08-052010-08-052010-08-19Bibliographically approved