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Photoelectrical characteristics of a C/CNx multiwalled nanotube
KTH, School of Biotechnology (BIO), Theoretical Chemistry.ORCID iD: 0000-0002-2442-1809
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2007 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 17, no 15, 2842-2846 p.Article in journal (Refereed) Published
Abstract [en]

A nanotube diode fabricated from a single C/CNx multiwalled nanotube exhibits a large photocurrent and a large photovoltage under illumination. The current-voltage (I-V) characteristics of the diode indicate a clear rectification effect. By comparing the I-V characteristics of C, CNx, and C/CNx nanotube diodes, we show that the rectifying characteristics of the C/CNx diode arises from the molecular junction formed at the C/CNx interface where the C and CNx segments are chemically bonded. External radiation photochernically generates electrons and holes in the C/CNx nanotube, producing a large photocurrent because of the influence of the strong electric field in the vicinity of the C/CNx junction. These unique photoresponsive characteristics of C/CNx, nanotube junction diodes points to potential applications such as photovoltaic devices and photodiodes.

Place, publisher, year, edition, pages
2007. Vol. 17, no 15, 2842-2846 p.
Keyword [en]
field-effect transistors, carbon nanotube, intramolecular junctions, logic gates, photoconductivity, optoelectronics, rectification, cnx/c
Identifiers
URN: urn:nbn:se:kth:diva-17078DOI: 10.1002/adfm.200600830ISI: 000250526300029Scopus ID: 2-s2.0-35548939536OAI: oai:DiVA.org:kth-17078DiVA: diva2:335121
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Fu, YingLuo, Yi

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