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Strong photoacoustic oscillations in layered TlGaSe2 semiconductor
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2007 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 244, no 12, 4624-4628 p.Article in journal (Refereed) Published
Abstract [en]

Periodic deflections of infrared probe are observed in TlGaSe2 after lateral excitation with optical pulse. The effect is explained by generation of photoacoustic dilatational wave, which propagates within the crystal. Low pulse fluence (0.01 mJ/cm(2)) is needed to induce such wave when the layer plane is excited. Acoustic wave is generated within a mu m-distance near the excited face, much shorter then the light penetration depth, 1/alpha, where alpha is the absorption coefficient. In the temperature range 105-120 K, where ferroelectric-paraelectric phase transition occur in TlGaSe2, discontinuous changes of the longitudinal sound velocity have been detected.

Place, publisher, year, edition, pages
2007. Vol. 244, no 12, 4624-4628 p.
Keyword [en]
absorption-edge, generation, excitation
Identifiers
URN: urn:nbn:se:kth:diva-17203DOI: 10.1002/pssb.200743303ISI: 000252309500054Scopus ID: 2-s2.0-38049166496OAI: oai:DiVA.org:kth-17203DiVA: diva2:335246
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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Microelectronics and Applied Physics, MAP
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