Wet etching study of La-0.67(Sr0.5Ca0.5)(0.33)MnO3 films on silicon substrates
2008 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 37, no 3, 361-367 p.Article in journal (Refereed) Published
Wet etching of colossal magnetoresistive (CMR) perovskite La-0.67(Sr0.5Ca0.5)(0.33)MnO3 (LSCMO) films on Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ)-buffered Si substrates was investigated using potassium hydroxide (KOH) and buffered hydrofluoric acid (BHF) solutions. X-ray diffraction (XRD) and scanning spreading resistance microscopy (SSRM) measurements revealed that the morphological roughness of the LSCMO films increases, while the electrical resistance roughness decreases, with increasing KOH etching time. The LSCMO films are highly chemically resistant to KOH solution; however, in the case of BHF etching, an etch rate of 22 nm/min was obtained with high selectivity over a photoresist mask.
Place, publisher, year, edition, pages
2008. Vol. 37, no 3, 361-367 p.
etch rate, manganite, selectivity, KOH, BHF, SSRM, spreading resistance microscopy, thin-films, infrared detectors, fabrication, manganite, carriers, nife
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-17275DOI: 10.1007/s11664-007-0343-xISI: 000252483100016ScopusID: 2-s2.0-38349155865OAI: oai:DiVA.org:kth-17275DiVA: diva2:335318
QC 201005252010-08-052010-08-052010-11-01Bibliographically approved