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Theoretical evidence of a superconducting transition in doped silicon and germanium driven by a variation of chemical composition
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 5Article in journal (Refereed) Published
Abstract [en]

We present the first theoretical evidence of chemical composition driven superconductivity in acceptor-doped silicon and germanium, using density functional theory. We examine the concentration dependence of T-c in B-doped Si and Ge and predict that B-doped Ge is a superconductor with a slightly higher T-c than B-doped Si. We show that there is a critical concentration above which B-doped Si and Ge become superconducting and estimate it to be similar to 2.6% in Si:B and similar to 2.2% in Ge:B. Considering the Al-doped Si and Ge, we point out the decisive role of the chemical element in the hole-doping scenario.

Place, publisher, year, edition, pages
2008. Vol. 92, no 5
Keyword [en]
potential model, temperature, approximation, diamond, alloys
Identifiers
URN: urn:nbn:se:kth:diva-17309DOI: 10.1063/1.2840696ISI: 000253016500050Scopus ID: 2-s2.0-38949161434OAI: oai:DiVA.org:kth-17309DiVA: diva2:335353
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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