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Threshold voltage variation in SOI Schottky-barrier MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2008 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 55, no 3, 858-865 p.Article in journal (Refereed) Published
Abstract [en]

The inhomogeneity of Schottky-barrier (SB) height Phi(B) is found to strongly affect the threshold voltage V-th Of SB-MOSFETs fabricated in ultrathin body silicon-on-insulator (SOI). The magnitude of this influence is dependent on gate oxide thickness t(ox) and SOI body thickness t(si); the contribution of inhomogeneity to the V-th variation becomes less pronounced with smaller t(ox) and/or larger t(si). Moreover, an enhanced V-th variation is observed for devices with dopant segregation used for reduction of the effective Phi(B). Furthermore, a multigate structure is found to help suppress the V-th variation by improving carrier injection through reduction of its sensitivity to the Phi(B) inhomogeneity. A new method for extraction of Phi(B) from room temperature transfer characteristics is also presented.

Place, publisher, year, edition, pages
2008. Vol. 55, no 3, 858-865 p.
Keyword [en]
ambioplar, Schottky barrier inhomogeneity, Schottky barrier MOSFET, silicon-on-insulator, threshold voltage, height distribution, electron-transport, performance, gate
URN: urn:nbn:se:kth:diva-17345DOI: 10.1109/7ed.2007.915054ISI: 000253505800022ScopusID: 2-s2.0-40949085668OAI: diva2:335389
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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