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Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
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2008 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 100, no 8Article in journal (Refereed) Published
Abstract [en]

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Place, publisher, year, edition, pages
2008. Vol. 100, no 8
Keyword [en]
semiconductor 001 surfaces, electron counting model, augmented-wave, method, gaas(001) surface, bi
Identifiers
URN: urn:nbn:se:kth:diva-17359DOI: 10.1103/PhysRevLett.100.086101ISI: 000253764400035Scopus ID: 2-s2.0-40849145742OAI: oai:DiVA.org:kth-17359DiVA: diva2:335403
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Vitos, Levente

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