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Novel semiconducting materials for optoelectronic applications: Al1-xTlxN alloys
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 12Article in journal (Refereed) Published
Abstract [en]

We proprose the ternary semiconducting Al1-xTlxN alloys as new material for optoelectronic applications. Ab initio calculations have been performed to study structural, electronic, and optical properties of the theoretically designed thallium-aluminum based nitride alloys. We found that the lattice constants vary linearly with thallium composition whereas the band gap and absorption edge span from ultraviolet to infrared energy region by increasing thallium content which make the predicted material interesting for infrared optical devices among other technological applications.

Place, publisher, year, edition, pages
2008. Vol. 92, no 12
Keyword [en]
generalized gradient approximation, molecular-beam epitaxy, optical-properties, aln, temperature, zincblende, growth, gas
Identifiers
URN: urn:nbn:se:kth:diva-17417DOI: 10.1063/1.2901146ISI: 000254510300029Scopus ID: 2-s2.0-41349103210OAI: oai:DiVA.org:kth-17417DiVA: diva2:335461
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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