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Distinguishing self-gated rectification action from ordinary diode rectification in back-gated carbon nanotube devices
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-6430-6135
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 133111Article in journal (Refereed) Published
Abstract [en]

Self-gating leading to rectification action is frequently observed in two-terminal devices built from individual or networked single-walled carbon nanotubes (SWCNTs) on oxidized Si substrates. The current-voltage (I-V) curves of these SWCNT devices remain unaltered when switching the measurement probes. For ordinary diodes, the I-V curves are symmetric about the origin of the coordinates when exchanging the probes. Numerical simulations suggest that the self-gated rectification action should result from the floating semiconducting substrate which acts as a back gate. Self-gating effect is clearly not unique for SWCNT devices. As expected, it is absent for devices fabricated on insulating substrates.

Place, publisher, year, edition, pages
2008. Vol. 92, no 133111
Keyword [en]
thin-film transistors, single, networks, junctions
URN: urn:nbn:se:kth:diva-17433DOI: 10.1063/1.2906367ISI: 000254669900079ScopusID: 2-s2.0-41649115409OAI: diva2:335477
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2010-09-10Bibliographically approved
In thesis
1. Ink-jet printing of thin film transistors based on carbon nanotubes
Open this publication in new window or tab >>Ink-jet printing of thin film transistors based on carbon nanotubes
2010 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. The main challenge of this work is to suppress the effects of “metallic SWCNT contamination” and improve the device electrical performance. To this end, this thesis entails a balance between experiments and simulations.


First, TFTs with low-density SWCNTs in the channel region are fabricated by utilizing standard silicon technology. Their electrical performance is investigated in terms of throughput, transfer characteristics, dimensional scaling and dependence on electrode metals. The demonstrated insensitivity of electrical performance to the electrode metals lifts constrains on choosing metal inks for ink-jet printing.


Second, Monte Carlo models on the basis of percolation theory have been established, and high-efficiency algorithms have been proposed for investigations of large-size stick systems in order to facilitate studies of TFTs with channel length up to 1000 times that of the SWCNTs. The Monte Carlo simulations have led to fundamental understanding on stick percolation, including high-precision percolation threshold, universal finite-size scaling function, and dependence of critical conductivity exponents on assignment of component resistance. They have further generated understanding of practical issues regarding heterogeneous percolation systems and the doping effects in SWCNT TFTs.


Third, Monte Carlo simulations are conducted to explore new device structures for performance improvement of SWCNT TFTs. In particular, a novel device structure featuring composite SWCNT networks in the channel is predicted by the simulation and subsequently confirmed experimentally by another research group. Through Monte Carlo simulations, the compatibility of previously-proposed long-strip-channel SWCNT TFTs with ink-jet printing has also been demonstrated.


Finally, relatively sophisticated ink-jet printing techniques have been developed for SWCNT TFTs with long-strip channels. This research spans from SWCNT ink formulation to device design and fabrication. SWCNT TFTs are finally ink-jet printed on both silicon wafers and flexible Kapton substrates with fairly high electrical performance.

Place, publisher, year, edition, pages
Stockholm: KTH, 2010. xiv, 58 p.
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2010:08
Single-walled carbon nanotube, thin film transistor, ink-jet printing, Monte Carlo simulation, stick percolation, composite network, flexible electronics
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
urn:nbn:se:kth:diva-24427 (URN)978-91-7415-717-8 (ISBN)
Public defence
2010-09-24, Sal D, KTH Forum, Isafjordsgatan 39, Kista, 13:15 (English)
QC 20100910Available from: 2010-09-10 Created: 2010-09-08 Last updated: 2010-09-10Bibliographically approved

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