Distinguishing self-gated rectification action from ordinary diode rectification in back-gated carbon nanotube devices
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 133111Article in journal (Refereed) Published
Self-gating leading to rectification action is frequently observed in two-terminal devices built from individual or networked single-walled carbon nanotubes (SWCNTs) on oxidized Si substrates. The current-voltage (I-V) curves of these SWCNT devices remain unaltered when switching the measurement probes. For ordinary diodes, the I-V curves are symmetric about the origin of the coordinates when exchanging the probes. Numerical simulations suggest that the self-gated rectification action should result from the floating semiconducting substrate which acts as a back gate. Self-gating effect is clearly not unique for SWCNT devices. As expected, it is absent for devices fabricated on insulating substrates.
Place, publisher, year, edition, pages
2008. Vol. 92, no 133111
thin-film transistors, single, networks, junctions
IdentifiersURN: urn:nbn:se:kth:diva-17433DOI: 10.1063/1.2906367ISI: 000254669900079ScopusID: 2-s2.0-41649115409OAI: oai:DiVA.org:kth-17433DiVA: diva2:335477
QC 201005252010-08-052010-08-052010-09-10Bibliographically approved