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Thermal analysis for a photonic Si ridge wire with a submicron metal heater
KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.ORCID iD: 0000-0002-3401-1125
2008 (English)In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 281, no 9, 2467-2471 p.Article in journal (Refereed) Published
Abstract [en]

A photonic Si ridge wire with a submicron metal heater and the associated thermal analysis are presented. When the up-cladding thickness becomes thinner, the thermal response becomes faster while the temperature at the core region remains almost the same. When the under-etched depth in the insulator layer increases, the stable temperature increases linearly at the same power consumption. This indicates that a deeper etching is preferred to achieve a lower power consumption (for the same temperature increment). Our numerical simulation also shows that the power consumption of the present Si waveguide structure is almost less than 1/10 of that for a conventional one and the response time is about half of that of the conventional one.

Place, publisher, year, edition, pages
2008. Vol. 281, no 9, 2467-2471 p.
Keyword [en]
thermo-optical (TO), Si, wire, submicron, heater, thermal, rise time, silicon-on-insulator, wave-guides, thermooptical switches
Identifiers
URN: urn:nbn:se:kth:diva-17501DOI: 10.1016/j.optcom.2007.12.057ISI: 000255487400020Scopus ID: 2-s2.0-40849114640OAI: oai:DiVA.org:kth-17501DiVA: diva2:335545
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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