Thermal analysis for a photonic Si ridge wire with a submicron metal heater
2008 (English)In: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 281, no 9, 2467-2471 p.Article in journal (Refereed) Published
A photonic Si ridge wire with a submicron metal heater and the associated thermal analysis are presented. When the up-cladding thickness becomes thinner, the thermal response becomes faster while the temperature at the core region remains almost the same. When the under-etched depth in the insulator layer increases, the stable temperature increases linearly at the same power consumption. This indicates that a deeper etching is preferred to achieve a lower power consumption (for the same temperature increment). Our numerical simulation also shows that the power consumption of the present Si waveguide structure is almost less than 1/10 of that for a conventional one and the response time is about half of that of the conventional one.
Place, publisher, year, edition, pages
2008. Vol. 281, no 9, 2467-2471 p.
thermo-optical (TO), Si, wire, submicron, heater, thermal, rise time, silicon-on-insulator, wave-guides, thermooptical switches
IdentifiersURN: urn:nbn:se:kth:diva-17501DOI: 10.1016/j.optcom.2007.12.057ISI: 000255487400020ScopusID: 2-s2.0-40849114640OAI: oai:DiVA.org:kth-17501DiVA: diva2:335545
QC 201005252010-08-052010-08-052013-11-19Bibliographically approved