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On the electron mobility enhancement in biaxially strained Si MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
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2008 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, no 4, 498-505 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports a detailed experimental and simulation study of the electron mobility enhancement induced by the biaxial strain in (001) silicon MOSFETs. To this purpose, ad hoc test structures have been fabricated on strained Si films grown on different SiGe virtual substrates and the effective mobility of the electrons has been extracted. To interpret the experimental results, we performed simulations using numerical solutions of Schroedinger-Poisson equations to calculate the charge and the momentum relaxation time approximation to calculate the mobility. The mobility enhancement with respect to the unstrained Si device has been analyzed as a function of the Ge content of SiGe substrates and of the operation temperature.

Place, publisher, year, edition, pages
2008. Vol. 52, no 4, 498-505 p.
Keyword [en]
strained silicon, mobility enhancement, characterization and Modeling, temperature dependence, surface roughness, field-effect transistors, silicon
Identifiers
URN: urn:nbn:se:kth:diva-17515DOI: 10.1016/j.sse.2007.10.033ISI: 000255618500003Scopus ID: 2-s2.0-40749144063OAI: oai:DiVA.org:kth-17515DiVA: diva2:335559
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-ErikMalm, B. Gunnar

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