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Electronic structure of Cu3N films studied by soft x-ray spectroscopy
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2008 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 20, no 23Article in journal (Refereed) Published
Abstract [en]

Soft x- ray emission spectroscopy was used to characterize the electronic structure of seven copper nitride films, one synthesized with atomic layer deposition ( ALD) and six grown with chemical vapor deposition ( CVD) at different preparation temperatures. Interpretation of the x- ray emission spectra was supported by calculations of the electronic structure for bulk pure Cu3N and Cu3N with: an excess of Cu atoms, oxygen or carbon impurities, and N vacancies. The calculations are shown to describe the experimental spectra quite well. Analysis of the x- ray spectra suggests that films grown in copper rich environments and above a cut- off temperature of approximately 360 degrees C have a growing fraction of copper enriched areas, while films prepared below this temperature do not have these areas with excess copper.

Place, publisher, year, edition, pages
2008. Vol. 20, no 23
Keyword [en]
nitride thin-films, total-energy calculations, augmented-wave method, copper nitride, deposition, growth
URN: urn:nbn:se:kth:diva-17562DOI: 10.1088/0953-8984/20/23/235212ISI: 000256172800014ScopusID: 2-s2.0-44649117498OAI: diva2:335606
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Ahuja, Rajeev
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Materials Science and Engineering
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