Tuning of spin polarization in ferromagnetic resonant tunneling diode by varying delta doping
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 24Article in journal (Refereed) Published
GaMnN ferromagnetic resonant tunneling diode, incorporating delta doping is theoretically investigated. A clear spin splitting current is observed when an optimal delta doping concentration is assumed. Compared to non delta doping case, the spin-down polarization can be enhanced 2-3 times at the doping concentration of 7x10(11) cm(-2). In addition, spin-down peak current is also increased similar to 30%. These results demonstrate that delta doping is a flexible and feasible way to tune electron spin polarization.
Place, publisher, year, edition, pages
2008. Vol. 92, no 24
magnetotransport, heterostructure, temperature, injection, gan
IdentifiersURN: urn:nbn:se:kth:diva-17624DOI: 10.1063/1.2949684ISI: 000256934900059ScopusID: 2-s2.0-45749097408OAI: oai:DiVA.org:kth-17624DiVA: diva2:335668
QC 201005252010-08-052010-08-05Bibliographically approved