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Tuning of spin polarization in ferromagnetic resonant tunneling diode by varying delta doping
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 24Article in journal (Refereed) Published
Abstract [en]

GaMnN ferromagnetic resonant tunneling diode, incorporating delta doping is theoretically investigated. A clear spin splitting current is observed when an optimal delta doping concentration is assumed. Compared to non delta doping case, the spin-down polarization can be enhanced 2-3 times at the doping concentration of 7x10(11) cm(-2). In addition, spin-down peak current is also increased similar to 30%. These results demonstrate that delta doping is a flexible and feasible way to tune electron spin polarization.

Place, publisher, year, edition, pages
2008. Vol. 92, no 24
Keyword [en]
magnetotransport, heterostructure, temperature, injection, gan
URN: urn:nbn:se:kth:diva-17624DOI: 10.1063/1.2949684ISI: 000256934900059ScopusID: 2-s2.0-45749097408OAI: diva2:335668
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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